An empirical method for imaging the short circuit current density in silicon solar cells based on dark lock-in thermography

• Published in: Solar energy materials and solar cells Vol. 143; pp. 406 - 410
• Main Authors: Breitenstein, Otwin, Fertig, Fabian, Bauer, Jan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2015
• Subjects: 2D device simulation; Density; Imaging; Local analysis; Lock-in thermography; Photocurrent imaging; Photovoltaic cells; Quantitative evaluation; Short circuit currents; Solar cells; Solar energy; Thermal imaging; Thermography; Photocurrent imaging; Lock-in thermography; Quantitative evaluation; Local analysis; 2D device simulation
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2015.07.027

The most straightforward way to map the photo-induced short circuit current density (Jsc) in solar cells is light beam-induced current (LBIC) mapping. Recently several methods for Jsc imaging based on camera-based photoluminescence and illuminated lock-in thermography imaging were proposed. This letter reports an alternative method for Jsc imaging, which is solely based on the evaluation of dark lock-in thermography images. This method is particularly advantageous to improve the accuracy of dark lock-in thermography based local efficiency analysis of solar cells. •PC1D simulations on Si cells are performed for varying bulk lifetime.•The dependence of Jsc on J01 is well-defined.•This dependence can be approximated by a linear+square function.•The fitting parameters A and B allow us to calculate Jsc from J01.•This allows us to derive Jsc images from DLIT images.