Experimental determination of the shape of the hole Fermi surface in tellurium

A study of the Shubnikov-de Haas effect in tellurium has demonstrated that the Fermi surface of holes in this semiconductor may be described by the equation ϵ = −ak 2 z−bk 2 ⊥+(λ 2+4a 2k 2 ok 2 z) 1 2 in the concentration range p ⩽ 5 × 10 17 cm −3.

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Bibliographic Details
Published inPhysics letters. A Vol. 29; no. 1; pp. 23 - 24
Main Authors Bresler, M.S., Farbstein, I.I., Mashovets, D.V., Kosichkin, Yu.V., Veselago, V.G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.1969
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Summary:A study of the Shubnikov-de Haas effect in tellurium has demonstrated that the Fermi surface of holes in this semiconductor may be described by the equation ϵ = −ak 2 z−bk 2 ⊥+(λ 2+4a 2k 2 ok 2 z) 1 2 in the concentration range p ⩽ 5 × 10 17 cm −3.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(69)90773-7