Effect of Residual Stress on Hole Mobility of SOS MOS Devices

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 17; no. 9; pp. 1587 - 1592
Main Authors Onga, Shinji, Hatanaka, Katunori, Kawaji, Shinji, Nishi, Yoshio, Yasuda, Yukio
Format Journal Article
LanguageEnglish
Published 01.01.1978
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.17.1587