Superhard composites of cubic silicon nitride and diamond
Powder mixture of graphite and silicon nitride with hexagonal structure (α/β-Si3N4) was ball-milled in nitrogen and compressed under ~16GPa/1800°C and ~18GPa/2000°C, to investigate the possibility for replacing Si atoms by C atoms in cubic spinel silicon nitride (c-Si3N4). The sintered samples were...
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Published in | Diamond and related materials Vol. 27-28; pp. 49 - 53 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.07.2012
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Powder mixture of graphite and silicon nitride with hexagonal structure (α/β-Si3N4) was ball-milled in nitrogen and compressed under ~16GPa/1800°C and ~18GPa/2000°C, to investigate the possibility for replacing Si atoms by C atoms in cubic spinel silicon nitride (c-Si3N4). The sintered samples were characterized by X-ray diffraction (XRD), hardness measurement, optical microscope, scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results show that the well-sintered compacts were composed of nanocrystalline c-Si3N4 and nanocrystalline diamond, and neither C3N4 and CSi2N4 nor other reaction products of Si3N4 and C were observed. Vickers hardness test shows that the average hardness of the samples is 41–42GPa. As a comparison, phase-pure c-Si3N4 bulks also have been synthesized and their hardness was confirmed to be about 31GPa. The pure c-Si3N4 sintered bulks exhibit a high frangibility, but their fracture toughness could be largely improved by adding carbon (nanocrystalline diamond) in the sintered compacts.
► Well-sintered compacts of c-Si3N4 and diamond composite have been synthesized. ► Nanodiamond improved the sintered compacts in hardness and fracture toughness. ► Vickers hardness of c-Si3N4 was confirmed to be 31GPa by synthesized pure bulks. ► Si atoms in Si3N4 cannot be replaced by C atoms up to 18GPa and 2000°C. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2012.05.013 |