Topological phenomena at the oxide interfaces

• Published in: Materials for quantum technology Vol. 3; no. 1; pp. 12002 - 12014
• Main Authors: Ravindran, Kavya, Dey, Jayjit Kumar, Keshri, Aryan, Roul, Basanta, Krupanidhi, Saluru Baba, Das, Sujit
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.03.2023
• Subjects: oxide interfaces; spintronics; topology
• ISSN: 2633-4356; 2633-4356
• DOI: 10.1088/2633-4356/acbcba

Abstract Topological phenomena at the oxide interfaces attract the scientific community for the fertile ground of exotic physical properties and highly favorable applications in the area of high-density low-energy nonvolatile memory and spintronic devices. Synthesis of atomically controlled ultrathin high-quality films with superior interfaces and their characterization by high resolution experimental set up along with high output theoretical calculations matching with the experimental results make this field possible to explain some of the promising quantum phenomena and exotic phases. In this review, we highlight some of the interesting interface aspects in ferroic thin films and heterostructures including the topological Hall effect in magnetic skyrmions, strain dependent interlayer magnetic interactions, interlayer coupling mediated electron conduction, switching of noncollinear spin texture etc. Finally, a brief overview followed by the relevant aspects and future direction for understanding, improving, and optimizing the topological phenomena for next generation applications are discussed.