Photoplastic effect in silicon
The influence of illumination (hv=1.17 eV, P=1 W/cm2 on the crystal surface) on the motion of dislocations in silicon is investigated in the temperature range 325°C–422°C using the double etching technique. The screw dislocation and one type of 60° dislocation (30/90 dislocation) exhibit a strong ph...
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| Published in | Physica B + C Vol. 116; no. 1-3; pp. 594 - 599 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.01.1983
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| Online Access | Get full text |
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| Summary: | The influence of illumination (hv=1.17 eV, P=1 W/cm2 on the crystal surface) on the motion of dislocations in silicon is investigated in the temperature range 325°C–422°C using the double etching technique.
The screw dislocation and one type of 60° dislocation (30/90 dislocation) exhibit a strong photoplastic effect : the activation energy of the 30/90 dislocation is changed by ΔE=0.68 eV.
The different behaviour of the two types of 60° dislocations points to recombination enhancement of the dislocation motion in contrast to the effect of a changed charge state. |
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| ISSN: | 0378-4363 |
| DOI: | 10.1016/0378-4363(83)90312-1 |