Effect of working pressure and temperature on ZnO film deposited on free-standing diamond substrates

• Published in: Transactions of Nonferrous Metals Society of China Vol. 16; no. B01; pp. 302 - 305
• Main Author: 赵平 夏义本 王林军 刘健敏 徐闰 彭鸿雁 史伟民
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2006; School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China%Department of Physics, Mudanjiang Normal College, Mudanjiang 157012, China
• Subjects: c-axis orientation; free-standing diamond film; radio-frequency magnetron sputtering; surface acoustic wave device; ZnO film; 加工压力; 加工温度; 声表面波器件; 氧化锌薄膜; 沉积; 自立金刚石衬底; ZnO film; surface acoustic wave device; c-axis orientation; free-standing diamond film; radio-frequency magnetron sputtering
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(06)60196-9

The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures （Tb） of substrate and working pressures （p） were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×10^5Ωcm which is observed by I- V test.