Brillouin scattering study in the GaN epitaxial layer

• Published in: Physica. B, Condensed matter Vol. 219; pp. 547 - 549
• Main Authors: Takagi, Y., Ahart, M., Azuhata, T., Sota, T., Suzuki, K., Nakamura, S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.1996

We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In 0.05Ga 0.95N(0.05 μm)/GaN(2 μm)/sapph...