Brillouin scattering study in the GaN epitaxial layer

We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In 0.05Ga 0.95N(0.05 μm)/GaN(2 μm)/sapph...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 219; pp. 547 - 549
Main Authors Takagi, Y., Ahart, M., Azuhata, T., Sota, T., Suzuki, K., Nakamura, S.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.1996
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Summary:We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In 0.05Ga 0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(95)00807-1