Brillouin scattering study in the GaN epitaxial layer
We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In 0.05Ga 0.95N(0.05 μm)/GaN(2 μm)/sapph...
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Published in | Physica. B, Condensed matter Vol. 219; pp. 547 - 549 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.04.1996
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Online Access | Get full text |
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Summary: | We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In
0.05Ga
0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/0921-4526(95)00807-1 |