Temperature dependence of the optical properties on GaInNP

• Published in: Journal of crystal growth Vol. 272; no. 1; pp. 765 - 771
• Main Authors: Hsu, S.H., Su, Y.K., Chang, S.J., Lin, K.I., Lan, W.H., Wu, P.S., Wu, C.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 10.12.2004; Elsevier
• Subjects: A1. Temperature dependent PL; A3. Metalorganic chemical vapor deposition; B2. GaInNP; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Iii-v semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Photoluminescence; Physics; Vapor phase epitaxy; growth from vapor phase; 78.20.−e; 71.35.−y; A3. Metalorganic chemical vapor deposition; 78.55.−m; 71.55.−l; B2. GaInNP; A1. Temperature dependent PL; Temperature dependence; Inorganic compounds; Epitaxial layers; Localized states; Charge carriers; Photoluminescence; 78.20.-e; VPE; Crystal growth from vapors; XRD; Experimental study; 71.55.-l; 78.55.-m A3. Metalorganic chemical vapor deposition; Thin films; Gallium phosphides; Al. Temperature dependent PL; Indium phosphides; MOVPE method; Bound exciton; Thermal annealing; 71.35.-y; Quaternary compounds; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.09.010

We report a detailed study of the localized carrier effect and optical characterization of the novel dilute-nitride GaInNP films. These films were grown by metal-organic vapor phase epitaxy on GaAs (1 0 0) substrates. These epitaxial layers were then characterized by a high-resolution X-ray rocking curve (XRC) and photoluminescence (PL) spectra. With nitrogen incorporation, the PL peak red shifts, indicating bandgap reduction, and the line width broadening increases due to the increase of non-radiative centers. The S-shape in temperature dependence of the PL spectra shows a considerable number of carriers detrap from localized states to higher bound exciton states as the increasing temperature. The PR spectrum is used to confirm the nitrogen induced localization. Furthermore, this localization phenomenon observed in low-temperature PL no longer exists after RTA process. This result suggests that the crystal quality is improved significantly by thermal treatment.