Microstructure-based multiphysics modeling for semiconductor integration and packaging

Semiconductor technology and packaging is advancing rapidly toward system integration where the packaging is co-designed and co-manufactured along with the wafer fabrication. However, materials issues, in particular the mesoscale microstructure, have to date been excluded from the integrated product...

Full description

Saved in:
Bibliographic Details
Published inChinese science bulletin Vol. 59; no. 15; pp. 1696 - 1708
Main Authors Huang, Zhiheng, Xiong, Hua, Wu, Zhiyong, Conway, Paul, Davies, Hugh, Dinsdale, Alan, En, Yunfei, Zeng, Qingfeng
Format Journal Article
LanguageEnglish
Published Heidelberg Springer-Verlag 01.05.2014
Science China Press
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Semiconductor technology and packaging is advancing rapidly toward system integration where the packaging is co-designed and co-manufactured along with the wafer fabrication. However, materials issues, in particular the mesoscale microstructure, have to date been excluded from the integrated product design cycle of electronic packaging due to the myriad of materials used and the complex nature of the material phenomena that require a multiphysics approach to describe. In the context of the materials genome initiative, we present an overview of a series of studies that aim to establish the linkages between the material microstructure and its responses by considering the multiple perspectives of the various multiphysics fields. The microstructure was predicted using thermodynamic calculations, sharp interface kinetic models, phase field, and phase field crystal modeling techniques. Based on the predicted mesoscale microstructure, linear elastic mechanical analyses and electromigration simulations on the ultrafine interconnects were performed. The microstructural index extracted by a method based on singular value decomposition exhibits a monotonous decrease with an increase in the interconnect size. An artificial neural network-based fitting revealed a nonlinear relationship between the microstructure index and the average von Mises stress in the ultrafine interconnects. Future work to address the randomness of microstructure and the resulting scatter in the reliability is discussed in this study.
Bibliography:Materials Genome Initiative ~Semiconductor integration and packaging -Microstructure ;Reliability ;Multiphysics modeling
11-1785/N
Semiconductor technology and packaging is advancing rapidly toward system integration where the packaging is co-designed and co-manufactured along with the wafer fabrication. However, materials issues, in par- ticular the mesoscale microstructure, have to date been excluded from the integrated product design cycle of electronic packaging due to the myriad of materials used and the complex nature of the material phenomena that require a multiphysics approach to describe. In the context of the materials genome initiative, we present an overview of a series of studies that aim to establish the linkages between the material microstructure and its responses by considering the multiple perspectives of the various mul- tiphysics fields. The microstructure was predicted using thermodynamic calculations, sharp interface kinetic models, phase field, and phase field crystal modeling techniques. Based on the predicted mesoscale microstruc- ture, linear elastic mechanical analyses and electromigra- tion simulations on the ultrafine interconnects were performed. The microstructural index extracted by a method based on singular value decomposition exhibits a monotonous decrease with an increase in the interconnect size. An artificial neural network-based fitting revealed a nonlinear relationship between the microstructure index and the average yon Mises stress in the ultrafine interconnects. Future work to address the randomness of microstructure and the resulting scatter in the reliability is discussed in this study.
http://dx.doi.org/10.1007/s11434-013-0103-7
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1001-6538
1861-9541
DOI:10.1007/s11434-013-0103-7