Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods...
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Published in | Nanoscale research letters Vol. 1; no. 1; pp. 32 - 45 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Springer Nature B.V
01.06.2006
Springer |
Subjects | |
Online Access | Get full text |
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Summary: | One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 1556-276X 1931-7573 1556-276X |
DOI: | 10.1007/s11671-006-9017-5 |