Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

• Published in: Chinese physics B Vol. 19; no. 9; pp. 559 - 563
• Main Author: 李春伟 朱彦旭 沈光地 张勇辉 秦园 高伟 蒋文静 邹德恕
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.09.2010
• Subjects: AlGaInP; Contact; Electrodes; Germanium; Gold; Indium tin oxide; ITO; LED; Light-emitting diodes; Performance enhancement; Zinc; 发光二极管; 氧化铟锡; 锌电极
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/19/9/097305

In this paper AlGaInP light emitting diodes with different types of electrodes： Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide （ITO）, but also reduces the specific contact resistances between ITO and GaP, which are 1.273× 10^-6 Ω·cm^2 and 1.743× 10^-3 Ω·cm^2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.