High dose N ion implantation effects on surface treated UNCD films

• Published in: Diamond and related materials Vol. 19; no. 7; pp. 927 - 931
• Main Authors: Sankaran, K.J., Joseph, P.T., Tai, N.H., Lin, I.N.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2010; Elsevier
• Subjects: Annealing; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Doping and impurity implantation in other materials; Electron and ion emission by liquids and solids; impact phenomena; Electron field emission; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Field emission; Field emission, ionization, evaporation, and desorption; Fullerenes and related materials; diamonds, graphite; Implantation; Ion implantation; Materials science; Physics; Raman spectroscopy; Specific materials; Structure of solids and liquids; crystallography; Surface and interface electron states; Surface charge; Surface treatment; UNCD; X-ray photoelectron spectroscopy; X-rays; Ion implantation; UNCD; Surface treatment; Electron field emission; Surface charge; Electronic properties; Annealing; Doses; Synthetic diamond; Doping; Surface treatments; Field emission; Raman spectroscopy; Thin films; Surface effect; Ultrananocrystalline diamond; Surface properties; Charge transfer; X-ray photoelectron spectra
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2010.02.027

Ion implantation is commonly used to modify the surface or near-surface properties of materials. In this work, plasma treated ultrananocrystalline diamond (UNCD) films were implanted using 100 and 200 keV high dose (10 16 ions/cm 2) nitrogen ions and annealed. Detailed studies have been carried out to reveal the structural and chemical states of the surface treated UNCD films before implantation, as-implanted, and after annealing by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electron field emission (EFE) measurements. The high dose N ion implantation induced the formation of amorphous phase, which are converted into graphitic phase after annealing, and improved the field emission properties of UNCD films. The improved field emission is attributed to the surface charge transfer doping mechanism.