A two steps CVD process for the growth of silicon nano-crystals

We have developed a two steps chemical vapor deposition (CVD) process which permits to dissociate the nucleation and the growth of silicon nano-crystals. In the first step, silicon “clusters” of a diameter below 1nm are nucleated by exposure of the SiO2 substrate to SiH4. In the second step, these c...

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Bibliographic Details
Published inApplied surface science Vol. 214; no. 1-4; pp. 359 - 363
Main Authors Mazen, F., Baron, T., Papon, A.M., Truche, R., Hartmann, J.M.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 31.05.2003
Elsevier Science
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
CVD
Exact sciences and technology
Materials science
Nano-crystals
Nanoscale materials and structures: fabrication and characterization
Physics
Silicon
CVD
Nano-crystals
61.46
Silicon
52.75.R
Transmission electron microscopy
Nucleation
Quantum dots
61.46 CVD
Nanocrystal
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Summary:We have developed a two steps chemical vapor deposition (CVD) process which permits to dissociate the nucleation and the growth of silicon nano-crystals. In the first step, silicon “clusters” of a diameter below 1nm are nucleated by exposure of the SiO2 substrate to SiH4. In the second step, these clusters are grown selectively using SiH2Cl2 as silicon precursor. TEM analysis shows that the silicon quantum dots (Si-QDs) obtained with this process are mono-crystalline. The main advantage of this two steps process is that the size dispersion is sharpened compared to a standard one step process because of the dissociation of the nucleation and the growth of the Si-QDs.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(03)00521-X