Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool prov...

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Bibliographic Details
Published inMolecular Crystals and Liquid Crystals Vol. 635; no. 1; pp. 67 - 73
Main Authors Song, Dong-Seok, Kim, Hyeok, Vincent, Premkumar, Hahn, Joonku, Park, Jaehoon, Bae, Jin-Hyuk
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 12.08.2016
Taylor & Francis Ltd
Subjects
CAD
Channels
Computer aided design
Computer programs
Computer simulation
Crystals
Electrode overlap
Electrodes
Electronics industry
Numerical Study
Off-state features
Semiconductor devices
Thin film transistors
Thin films
Thin-film transistor
Transistors
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Summary:We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1542-1406
1563-5287
1527-1943
DOI:10.1080/15421406.2016.1200357