GaInAsP/InP surface-emitting lasers with current confining structure

• Published in: Journal of lightwave technology Vol. 4; no. 7; pp. 846 - 851
• Main Authors: Uchiyama, S., Ohmae, Y., Shimizu, S., Iga, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.07.1986; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Chemical lasers; Electrodes; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Gold; Indium phosphide; Laser theory; Lasers; Mirrors; Optics; Other techniques and industries; Physics; Ring lasers; Semiconductor lasers; laser diodes; Surface emitting lasers; Threshold current; Zinc; Gallium Indium Arsenides phosphides Mixed; Emission; Semiconductor laser; Surface
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.1986.1074790

In order to reduce the threshold current of GaInAsP/InP surface-emitting (SE) lasers, we search for an effective current confining structure and examined several types; round-low-mesa, round-high-mesa/polyimide-buried, buried-heterostructure (BH), and planar-buried-heterostructure (PBH). The minimum threshold current was reduced down to 18 mA at 77 K and the threshold current density was estimated to be reduced to 3 kA/cm 2 . The operating temperature has been raised to -10°C (263 K). The longitudinal-mode hopping was first observed for GaInAsP/InP SE lasers. The effective refractive index for GaInAsP/InP SE lasers was 4-5, that was almost the same as conventional edge-emitting lasers.