An investigation on terahertz response in electro-optic crystals excited at 1.03 μm wavelength

We theoretically investigate terahertz (THz) emission and detection from (ll0)-oriented electro-optic (EO) crystals adapted for Yb-doped femtosecond pulse laser. According to the principles of phase-matching condition, the dispersion relation between optical velocity and THz pulse, THz absorption sp...

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Bibliographic Details
Published inChinese science bulletin Vol. 59; no. 11; pp. 1187 - 1191
Main Authors Luo, Congwen, Zhao, Zhenyu, Shi, Wangzhou, Chen, Zhizhan
Format Journal Article
LanguageEnglish
Published Heidelberg Springer-Verlag 01.04.2014
Science China Press
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Summary:We theoretically investigate terahertz (THz) emission and detection from (ll0)-oriented electro-optic (EO) crystals adapted for Yb-doped femtosecond pulse laser. According to the principles of phase-matching condition, the dispersion relation between optical velocity and THz pulse, THz absorption spectra, and coherence lengths of CdTe, GaP, and GaAs crystals below the phonon resonant frequency are calculated correspondingly. The optical rectification and EO sampling process of above crystals with the same thickness of 0.1 mm are simulated. As a consequence, we found that the optimal emission frequency of CdTe is at 2.65 THz, however, it reaches 6.56 THz of GaAs and 4.77 THz of GaP. With the help of frequency response function, the calculated cut-off frequency of CdTe is only 3.45 THz, while GaAs and GaP achieve 7.15 and 6.37 THz correspondingly. Finally, the EO sampling sensitivity of GaAs is higher than CdTe and GaP when the crystal's thickness exceeds 1.58 mm. The strong THz absorption of CdTe saturates distinctly the EO sampling sensitivity with its thickness increasing.
Bibliography:11-1785/N
Terahertz radiation ; Opticalrectification ; EO sampling ; Coherence lengthSensitivity
We theoretically investigate terahertz (THz) emission and detection from (ll0)-oriented electro-optic (EO) crystals adapted for Yb-doped femtosecond pulse laser. According to the principles of phase-matching condition, the dispersion relation between optical velocity and THz pulse, THz absorption spectra, and coherence lengths of CdTe, GaP, and GaAs crystals below the phonon resonant frequency are calculated correspondingly. The optical rectification and EO sampling process of above crystals with the same thickness of 0.1 mm are simulated. As a consequence, we found that the optimal emission frequency of CdTe is at 2.65 THz, however, it reaches 6.56 THz of GaAs and 4.77 THz of GaP. With the help of frequency response function, the calculated cut-off frequency of CdTe is only 3.45 THz, while GaAs and GaP achieve 7.15 and 6.37 THz correspondingly. Finally, the EO sampling sensitivity of GaAs is higher than CdTe and GaP when the crystal's thickness exceeds 1.58 mm. The strong THz absorption of CdTe saturates distinctly the EO sampling sensitivity with its thickness increasing.
http://dx.doi.org/10.1007/s11434-014-0172-2
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1001-6538
1861-9541
DOI:10.1007/s11434-014-0172-2