Growth of ultra small self-assembled InGaN nanotips

• Published in: Journal of crystal growth Vol. 263; no. 1-4; pp. 63 - 67
• Main Authors: Ji, L.W., Su, Y.K., Chang, S.J., Fang, T.H., Wen, T.C., Hung, S.C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2004; Elsevier
• Subjects: A1. Atomic force microscopy; A1. Nanotips; A3. Metalorganic chemical vapor deposition; B1. Nitrides; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Iii-v semiconductors; Materials science; Methods of nanofabrication; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Self-assembly; 68.65.Hb; 68.37.Lp; A1. Atomic force microscopy; 68.37.Ps; 81.16.Dn; 78.67.Hc; B1. Nitrides; 73.21.La; A3. Metalorganic chemical vapor deposition; 82.33.Ya; A1. Nanotips; Atomic force microscopy; Bl. Nitrides; Inorganic compounds; Gallium nitrides; Photoluminescence; Field emission; Crystal growth from vapors; Indium nitrides; Localization; Thermal annealing; Ternary compounds; Quantum effect; Experimental study; MOCVD; CVD; Self-assembly; 82.33.Ya Al. Atomic force microscopy; Nanostructured materials; III-V semiconductors; Al. Nanotips

Vertical self-organized nanotips were grown on InGaN film via metal-organic chemical vapor deposition (MOCVD) and thermal annealing. It was found that typical height of these nanotips is 20nm with an average width of 1nm. It was also found that the local density of the vertically grown self-assemble...