Growth of ultra small self-assembled InGaN nanotips

Vertical self-organized nanotips were grown on InGaN film via metal-organic chemical vapor deposition (MOCVD) and thermal annealing. It was found that typical height of these nanotips is 20nm with an average width of 1nm. It was also found that the local density of the vertically grown self-assemble...

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Published inJournal of crystal growth Vol. 263; no. 1-4; pp. 63 - 67
Main Authors Ji, L.W., Su, Y.K., Chang, S.J., Fang, T.H., Wen, T.C., Hung, S.C.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.2004
Elsevier
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Summary:Vertical self-organized nanotips were grown on InGaN film via metal-organic chemical vapor deposition (MOCVD) and thermal annealing. It was found that typical height of these nanotips is 20nm with an average width of 1nm. It was also found that the local density of the vertically grown self-assembled InGaN nanotips could reach 1.6×1013cm−2. Furthermore, it was found that height and width of the nanotips both distributed uniformly. The possible formation mechanism of self-assembled nanotips has been also discussed in this work. Such a small size of vertical nanotips could show strong quantum localization effects and have potential applications in field emission devices, near-field microscopy, and blue photonics.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2003.11.076