Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb inte...

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Bibliographic Details
Published inChinese physics B Vol. 19; no. 3; pp. 477 - 481
Main Author 代由勇 颜世申 田玉峰 陈延学 刘国磊 梅良模
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2010
Subjects
Carriers
Fermi surfaces
Ferromagnetism
Mathematical models
Oxides
Semiconductors
Transition metals
Transport
变程跳跃
变量范围
宽禁带半导体
库仑相互作用
电子传输
自旋相关
过渡金属氧化物
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/19/3/037203

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Summary:This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.
Bibliography:variable range hopping, ferromagnetic semiconductors, electrical transport, spin polar-ization
11-5639/O4
TN304.23
TQ174.758
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SourceType-Scholarly Journals-1
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/3/037203