Epitaxial growth of Fe films on cubic GaN(0 0 1)
Fe films have been grown on cubic GaN(0 0 1) layers by molecular beam epitaxy. They were studied in situ by reflection high-energy electron diffraction, X-ray photoemission spectroscopy and X-ray photoelectron diffraction and ex situ by Rutherford backscattering spectrometry (RBS), X-ray diffraction...
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Published in | Journal of crystal growth Vol. 240; no. 1; pp. 236 - 240 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.04.2002
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Fe films have been grown on cubic GaN(0
0
1) layers by molecular beam epitaxy. They were studied in situ by reflection high-energy electron diffraction, X-ray photoemission spectroscopy and X-ray photoelectron diffraction and ex situ by Rutherford backscattering spectrometry (RBS), X-ray diffraction and alternating gradient field magnetometry. Despite the large lattice mismatch between Fe and cubic GaN [Δ
a/
a=(2
a
Fe−
a
GaN)/
a
GaN=+26%], the growth of Fe on GaN was found to be epitaxial with the orientation relationship (0
0
1)[1
0
0]Fe∥(0
0
1)[1
1
0]GaN i.e. with a 45° rotation of the Fe unit cell with respect to the GaN one. The mosaic spread of the Fe film does not exceed 1°. In such conditions we observed that the magnetic hysteresis loops show a cubic anisotropy with the easy axes along 〈1
0
0〉, as for bulk bcc Fe. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/S0022-0248(02)00834-5 |