Epitaxial growth of Fe films on cubic GaN(0 0 1)

Fe films have been grown on cubic GaN(0 0 1) layers by molecular beam epitaxy. They were studied in situ by reflection high-energy electron diffraction, X-ray photoemission spectroscopy and X-ray photoelectron diffraction and ex situ by Rutherford backscattering spectrometry (RBS), X-ray diffraction...

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Published inJournal of crystal growth Vol. 240; no. 1; pp. 236 - 240
Main Authors Lallaizon, C., Schieffer, P., Lépine, B., Guivarc’h, A., Abel, F., Cohen, C., Feuillet, G., Daudin, B., Dau, F.Nguyen Van
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2002
Elsevier
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Summary:Fe films have been grown on cubic GaN(0 0 1) layers by molecular beam epitaxy. They were studied in situ by reflection high-energy electron diffraction, X-ray photoemission spectroscopy and X-ray photoelectron diffraction and ex situ by Rutherford backscattering spectrometry (RBS), X-ray diffraction and alternating gradient field magnetometry. Despite the large lattice mismatch between Fe and cubic GaN [Δ a/ a=(2 a Fe− a GaN)/ a GaN=+26%], the growth of Fe on GaN was found to be epitaxial with the orientation relationship (0 0 1)[1 0 0]Fe∥(0 0 1)[1 1 0]GaN i.e. with a 45° rotation of the Fe unit cell with respect to the GaN one. The mosaic spread of the Fe film does not exceed 1°. In such conditions we observed that the magnetic hysteresis loops show a cubic anisotropy with the easy axes along 〈1 0 0〉, as for bulk bcc Fe.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(02)00834-5