Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy

• Published in: Journal of crystal growth Vol. 260; no. 3; pp. 348 - 359
• Main Authors: Chandvankar, S.S, Shah, A.P, Bhattacharya, A, Chandrasekaran, K.S, Arora, B.M
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.01.2004; Elsevier
• Subjects: A1. Strained layers; A3. Liquid phase epitaxy; B3. Laser diodes; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deformation and plasticity (including yield, ductility, and superplasticity); Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Methods of deposition of films and coatings; film growth and epitaxy; Optics; Physics; Semiconductor lasers; laser diodes; A3. Liquid phase epitaxy; B3. Laser diodes; A1. Strained layers; Aluminium arsenides; Ultrathin films; Crystal growth; LPE; Scanning electron microscopy; Gallium arsenides; Inorganic compounds; Ternary compounds; XRD; Experimental study; Laser diodes; Growth from liquid; Thin films; Strains; Strained layer; Heterostructures; III-V semiconductors; Al. Strained layers
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.08.066

AlGaAs-based strained separately confined heterostructure laser diodes operating in the 800–900 nm wavelength range have been fabricated from the structures grown using low temperature liquid-phase epitaxy (LPE). Addition of P/Sb to the active region introduces tensile/compressive strain in the structure and is found useful in tuning the emission wavelength. Details of the growth experiments, strain measurements, fabrication and characterization of the laser diodes are described.