Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy
AlGaAs-based strained separately confined heterostructure laser diodes operating in the 800–900 nm wavelength range have been fabricated from the structures grown using low temperature liquid-phase epitaxy (LPE). Addition of P/Sb to the active region introduces tensile/compressive strain in the stru...
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Published in | Journal of crystal growth Vol. 260; no. 3; pp. 348 - 359 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.01.2004
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | AlGaAs-based strained separately confined heterostructure laser diodes operating in the 800–900
nm wavelength range have been fabricated from the structures grown using low temperature liquid-phase epitaxy (LPE). Addition of P/Sb to the active region introduces tensile/compressive strain in the structure and is found useful in tuning the emission wavelength. Details of the growth experiments, strain measurements, fabrication and characterization of the laser diodes are described. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2003.08.066 |