Temperature dependence of magnetoresistance in Co/ITO multilayers

• Published in: Journal of alloys and compounds Vol. 492; no. 1; pp. 61 - 64
• Main Authors: Lü, Ling, Yang, Yan Xia, Gao, Chunhong, Xiong, Yuan Qiang, Chen, Peng
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 04.03.2010; Elsevier
• Subjects: Alloys; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ferromagnetic metal-semiconductor; Giant magnetoresistance; Indium tin oxide; Magnetic properties and materials; Magnetoresistance; Magnetoresistivity; Magnetotransport phenomena, materials for magnetotransport; Multilayers; Physics; Power law; Temperature dependence; 75.20.−g; Multilayers; Temperature dependence; Ferromagnetic metal-semiconductor; 75.70.Cn; 75.20.En; Giant magnetoresistance; 75.47.De; Electron magnon interaction; Tin Indium Oxides; Cobalt; Temperature effects; Coercive force; 75.20.-g; Power law
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2009.12.012

The temperature dependence of resistance and giant magnetoresistance (GMR) has been investigated for Co/ITO multilayers in the temperature range of 15 and 300 K. The resistance of Co/ITO multilayers decreases with increasing temperature. The temperature dependence of resistance is found to obey Mott's 1/4 law below 60 K. The giant magnetoresistance and the net change of giant magnetoresistance of the samples decrease with increasing temperature. The temperature dependence of the net change of giant magnetoresistance can be fitted by a power law T n with n equal 1. The electron–magnon scattering produces a destructive influence on the giant magnetoresistance effect.