Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

• Published in: Journal of crystal growth Vol. 350; no. 1; pp. 56 - 59
• Main Authors: Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Imsemura, Masashi, Mori, Yusuke
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2012; Elsevier
• Subjects: A2. Growth from vapor; A2. Single crystal growth; A3. Vapor Phase Epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystallinity; Crystals; Degradation; Epitaxial growth; Exact sciences and technology; Gallium; Gallium nitrides; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Morphology; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Vapor phase epitaxy; growth from vapor phase; A3. Vapor Phase Epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; A2. Single crystal growth; A2. Growth from vapor; Crystal growth; Epitaxial layers; Growth rate; Surface morphology; VPE; Crystallinity; Gallium nitride; Crystal perfection; III-V compound; B2. Semiconducting III-V materials; Thin films; Growth from vapor; Ammonia; B1. Nitride; Monocrystals; Partial pressure; Growth mechanism; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.12.022

High-temperature epitaxial growth (>1200°C) of GaN using Ga2O vapor and NH3 was performed to increase the crystal growth rate and improve crystal qualities such as surface morphology, crystallinity and oxygen incorporation. Results showed that the growth rate linearly increased with the increasing partial pressure of Ga2O, PGa2O, while the surface morphology and crystallinity degraded, and oxygen concentration in the epilayers increased. When the growth temperature increased, smooth GaN epilayers without the degradation of crystallinity could be grown even at high PGa2O, i.e. a high growth rate. In addition, the oxygen concentration decreased as the growth temperature was increased.