Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering

Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly dependent on the growth temperature. Among them, the GeSn (...

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Bibliographic Details
Published inCrystals (Basel) Vol. 12; no. 12; p. 1810
Main Authors Huang, Hongjuan, Zhao, Desheng, Qi, Chengjian, Huang, Jingfa, Zeng, Zhongming, Zhang, Baoshun, Lu, Shulong
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.12.2022
Subjects
Alloys
Buffer layers
Chemical vapor deposition
Crystallization
Dislocations
Ge buffer
Ge1−xSnx alloy
Germanium
growth temperature
Intermetallic compounds
Magnetron sputtering
Misfit dislocations
Molecular beam epitaxy
Morphology
Silicon substrates
Single crystals
Temperature dependence
Thin films
Tin
China
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Summary:Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly dependent on the growth temperature. Among them, the GeSn (400) diffraction peak of the Ge1−xSnx film grown at 240 °C was the lowest, which is consistent with the Raman result. According to the transmission electron microscope image, some dislocations appeared at the interface between the Ge buffer layer and the Si substrate due to the large lattice mismatch, but a highly ordered atomic arrangement was observed at the interface between the Ge buffer layer and the Ge1−xSnx layer. The Ge1−xSnx film prepared by magnetron sputtering is expected to be a cost-effective fabrication method for Si-based infrared devices.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst12121810