Mimicking synaptic functionality with an InAs nanowire phototransistor

• Published in: Nanotechnology Vol. 29; no. 46; p. 464004
• Main Authors: Li, Bang, Wei, Wei, Yan, Xin, Zhang, Xia, Liu, Peng, Luo, Yanbin, Zheng, Jiahui, Lu, Qichao, Lin, Qimin, Ren, Xiaomin
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 16.11.2018
• Subjects: nanowire; phototransistor; synaptic function
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/aadf63

We demonstrate a nanowire (NW) phototransistor with synaptic behavior based on inherent persistent photoconductivity. The device is comprised of a single crystalline InAs NW, covered by a native indium oxide layer acting as the photogating layer (PGL). In the negative photoresponse range, the device mimics synaptic neuromorphic behaviors of short-term plasticity, long-term plasticity (LTP), and paired-pulse facilitation. Moreover, the transition from short-term to LTP is observed as the stimulus intensity increases, behaving in accord with the feature of cooperativity. The synaptic behaviors of the device are attributed to the photo-generated electrons trapped/detrapped in the PGL. This NW-based photonic synaptic device would find promising applications in neuromorphic systems and networks.