Quenching of photoluminescence from GaAs/AlGaAs single quantum well by an electric field at high temperature

Photoluminescence measurements at room temperature and at liquid nitrogen temperature on a GaAs/AlGaAs single quantum well structure subject to an electric field are performed to study (i) the photoluminescence quenching and (ii) the shift in the photoluminescence energy induced by the field. The ob...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 1; no. 2; pp. 111 - 113
Main Authors Yamanishi, M., Kan, Y., Minami, T., Suemune, I., Yamamoto, H., Usami, Y.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 1985
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ISSN0749-6036
1096-3677
DOI10.1016/0749-6036(85)90103-X

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Summary:Photoluminescence measurements at room temperature and at liquid nitrogen temperature on a GaAs/AlGaAs single quantum well structure subject to an electric field are performed to study (i) the photoluminescence quenching and (ii) the shift in the photoluminescence energy induced by the field. The observed shifts in the luminescence energies are explained successfully in terms of the field induced electron-hole separation model. For the quenching of the luminescence intensities, more work, particularly on nonradiative processes, is required to clarify the mechanism.
ISSN:0749-6036
1096-3677
DOI:10.1016/0749-6036(85)90103-X