Electron light scattering from doped silicon

The light scattering from homogeneous intervalley fluctuations of free carriers density in n-Si is calculated for any degree of the electron gas degeneration. Effects of the external stress on the scattering spectrum are considered. Results allow to explain the basic qualitative results of the exper...

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Bibliographic Details
Published inSolid state communications Vol. 37; no. 11; pp. 893 - 895
Main Authors Ipatova, I.P., Subashiev, A.V., Voitenko, V.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.1981
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Summary:The light scattering from homogeneous intervalley fluctuations of free carriers density in n-Si is calculated for any degree of the electron gas degeneration. Effects of the external stress on the scattering spectrum are considered. Results allow to explain the basic qualitative results of the experiment [7].
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(81)90504-4