Study of the exciton selection rules of layer-type semiconductor GaSe by thermoreflectance
By performing thermoreflectance measurements with polarized light on a face of a GaSe crystal normal to the plane of the layers it has been possible to show that the direct exciton transition is allowed and very strong when the electric field of light is normal to the layers, while it is 20 times we...
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| Published in | Solid state communications Vol. 12; no. 7; pp. 649 - 651 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.04.1973
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| Online Access | Get full text |
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| Summary: | By performing thermoreflectance measurements with polarized light on a face of a GaSe crystal normal to the plane of the layers it has been possible to show that the direct exciton transition is allowed and very strong when the electric field of light is normal to the layers, while it is 20 times weaker when the electric field is parallel to them. These findings disagree with presently available band structure calculations.
On a mesuré les spectres de thermoréflectivité du GaSe sur une face du cristal normale au plan des lamellas avec lumiére polarisée. On a observé que la transition excitonique est trés intense pour le champ électrique
E de la radiation normal au plan des lamelles; pour
E parallèle au dit plan la transition est moin intense par un facteur 20. Ce résultat experimental ne s'accorde pas avec les structures des bandes proposées jusqu'ici. |
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| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(73)90305-0 |