Orbital-selective metal skin induced by alkali-metal-dosing Mott-insulating Ca2RuO4

Abstract Doped Mott insulators are the starting point for interesting physics such as high temperature superconductivity and quantum spin liquids. For multi-band Mott insulators, orbital selective ground states have been envisioned. However, orbital selective metals and Mott insulators have been dif...

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Published inCommunications physics Vol. 6; no. 1; pp. 323 - 8
Main Authors Horio, Masafumi, Forte, Filomena, Sutter, Denys, Kim, Minjae, Fatuzzo, Claudia G., Matt, Christian E., Moser, Simon, Wada, Tetsuya, Granata, Veronica, Fittipaldi, Rosalba, Sassa, Yasmine, Gatti, Gianmarco, Rønnow, Henrik M., Hoesch, Moritz, Kim, Timur K., Jozwiak, Chris, Bostwick, Aaron, Rotenberg, Eli, Matsuda, Iwao, Georges, Antoine, Sangiovanni, Giorgio, Vecchione, Antonio, Cuoco, Mario, Chang, Johan
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group 06.11.2023
Nature Research
Nature Portfolio
Subjects
Alkali metals
Carrier density
Clusters
Current carriers
Dopants
Doping
High temperature
Insulators
Mean field theory
Metal surfaces
Metal-insulator transition
Perturbation theory
Photoelectric emission
Photoelectron spectroscopy
Physics
Selective surfaces
Spectrum analysis
Spin liquid
Superconductivity
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Summary:Abstract Doped Mott insulators are the starting point for interesting physics such as high temperature superconductivity and quantum spin liquids. For multi-band Mott insulators, orbital selective ground states have been envisioned. However, orbital selective metals and Mott insulators have been difficult to realize experimentally. Here we demonstrate by photoemission spectroscopy how Ca 2 RuO 4 , upon alkali-metal surface doping, develops a single-band metal skin. Our dynamical mean field theory calculations reveal that homogeneous electron doping of Ca 2 RuO 4 results in a multi-band metal. All together, our results provide evidence for an orbital-selective Mott insulator breakdown, which is unachievable via simple electron doping. Supported by a cluster model and cluster perturbation theory calculations, we demonstrate a type of skin metal-insulator transition induced by surface dopants that orbital-selectively hybridize with the bulk Mott state and in turn produce coherent in-gap states.
ISSN:2399-3650
2399-3650
DOI:10.1038/s42005-023-01436-1