Switching performances of static induction thyristor with buried-gate structure

• Published in: Science China. Information sciences Vol. 57; no. 6; pp. 161 - 168
• Main Authors: Liu, ChunJuan, Liu, Su, Bai, YaJie
• Format: Journal Article
• Language: English
• Published: Heidelberg Science China Press 01.06.2014; Springer Nature B.V
• Subjects: Buried structures; Channels; Circuit design; Computer Science; Dynamic models; Gates (circuits); Information Systems and Communication Service; Mathematical analysis; Mathematical models; Modulation; Optimization; Parameters; Power consumption; Research Paper; Switching; Thyristors; Two dimensional analysis; Two dimensional models; 关断过程; 动力学模型; 开关特性; 栅极驱动电路; 栅结构; 电导调制; 表演; 静电感应晶闸管; two-dimensional dynamical model; static induction thyristor; switching performance; potential barrier; gate driving
• ISSN: 1674-733X; 1869-1919
• DOI: 10.1007/s11432-013-4955-x

The switching characteristics of SITh are not only determined by the conductance modulation in channel between the gate regions,but also affected by the external gate driving circuit.The physical mechanism and behavior of switching process are studied deeply based on the fabrication practice of SITh.The dependence of switching performances of SITh on material,geometric structure and technological parameters are analytically discussed by using two-dimensional dynamical model firstly proposed in this paper.A series of optimum matching technological approaches have been developed for improving the switching characteristics of SITh.A versatile testing circuit is designed to get more accurate switching parameters and more stable switching-off process with lower power consumptions.The switching times ton and toff are reduced from 0.2μs and 1.2μs to 0.08μs and 1.0μs,respectively,and the dynamic dv/dt value of more than 1000 V/μs at switching-off is obtained.