ZnSe crystal growth by radical assisted MOCVD

Epitaxial growth of ZnSe on silicon substrates was studied by metal organic chemical vapor deposition (MOCVD), using diethylzinc (DEZ) and selenium hydride (SeH 2). During the epitaxial growth, hydrogen radicals or nitrogen radicals were introduced and showered on the growing surface. The growth rat...

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Bibliographic Details
Published inApplied surface science Vol. 100; pp. 621 - 624
Main Authors Hatanaka, Yoshinori, Aoki, Toru, Morita, Motohiko, Nakanishi, Yoichiro
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.1996
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Summary:Epitaxial growth of ZnSe on silicon substrates was studied by metal organic chemical vapor deposition (MOCVD), using diethylzinc (DEZ) and selenium hydride (SeH 2). During the epitaxial growth, hydrogen radicals or nitrogen radicals were introduced and showered on the growing surface. The growth rate was extensively increased in the presence of H radicals produced by the rf plasma. Heteroepitaxial growth of ZnSe on silicon appeared at the substrate temperatures above 400°C. When H radicals were replaced by N radicals produced by NH 3 plasma, N-radical doping into ZnSe which is promising to yield p-ZnSe was observed.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(96)00351-0