Optical and Electronic Energy Band Properties of Nb-Doped β-Ga2O3 Crystals

• Published in: Crystals (Basel) Vol. 11; no. 2; p. 135
• Main Authors: Long, Xianjian, Niu, Wenlong, Wan, Lingyu, Chen, Xian, Cui, Huiyuan, Sai, Qinglin, Xia, Changtai, Talwar, Devki N., Feng, Zhechuan
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.01.2021
• Subjects: Conduction bands; Crystal growth; Crystal structure; Doping; electronic energy band; Energy; Energy bands; Gallium oxides; Niobium; optical floating zone method; Optical properties; Raw materials; Spectrum analysis; β-Ga2O3:Nb
• ISSN: 2073-4352; 2073-4352
• DOI: 10.3390/cryst11020135

Systemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga2O3 crystals (β-Ga2O3:Nb) grown by the optical floating zone (OFZ) method. All of the β-Ga2O3:Nb crystals revealed monoclinic phases and good crystalline qualities. While the different Nb doped (i.e., 0.0001 mol%, 0.01 mol%, 0.1 mol% and 0.5 mol%) samples exhibited slightly changed bandgap energies Eg (≡ 4.72 eV, 4.73 eV, 4.81 eV, 4.68 eV)—the luminescence features indicated distinctive defect levels—affecting the electronic energy structure significantly. By increasing the Nb doping level from 0.0001 mol% to 0.1 mol%, the Fermi level (EF) moves closer to the bottom of the conduction band. For the sample with Nb doping 0.5 mol%—no further improvement is noticed in the electronic properties. Finally, the energy band diagrams of four samples are given.