Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance

• Published in: IEEE journal of quantum electronics Vol. 29; no. 5; pp. 1295 - 1308
• Main Authors: Scott, J.W., Geels, R.S., Corzine, S.W., Coldren, L.A.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.1993; Institute of Electrical and Electronics Engineers
• Subjects: Electrons; Equations; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Laser modes; Laser theory; Lasers; Optics; Physics; Power generation; Semiconductor lasers; laser diodes; Spontaneous emission; Steady-state; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Vertical cavity laser; Mathematical models; Semiconductor lasers; Temperature effects; Hole burning; Surface emitting laser
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.236145

Two-dimensional physical models for single-mode index guided vertical cavity surface emitting lasers (VCSELs) are developed and compared with experimental measurements on state-of-the-art devices. Starting with the steady-state electron and photon rate equations, the model calculates the above threshold light-current (LI) characteristics. Included are temperature effects, spatial hole burning effects, carrier diffusion, surface recombination, and an estimation of optical losses. The model shows that the saturation of output power in the experimental devices is due to carrier leakage over the heterojunction and not simply the shifting of the gain peak relative to the cavity mode. Using the verified model new designs are analyzed, showing that output powers greater than 15 mW and power efficiencies above 20% should be achievable with existing processing technology.< >