The effects of a dielectric capacitor layer and metallization on the propagation parameters of coplanar waveguide for MMIC

• Published in: IEEE transactions on microwave theory and techniques Vol. 36; no. 8; pp. 1285 - 1288
• Main Authors: Delrue, R., Seguinot, C., Pribetich, P., Kennis, P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.1988; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Capacitors; Circuit properties; Coupling circuits; Dielectric substrates; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Integrated circuit technology; Metallization; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwave FET integrated circuits; Microwave integrated circuits; Microwave propagation; MMICs; Monolithic integrated circuits; Numerical analysis; Coplanar technology; Metallizing; Capacitance; Microwave circuit; Guided wave propagation; Monolithic integrated circuit; Waveguide
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.3671

The study of coupling phenomena between lines laid on semiconductor substrates in monolithic microwave integrated circuit (MMIC) technologies and the determination of propagation effects on power FETs require the characterization of lines with micron transversal widths. For such lines, the influence of metallization thickness and dielectric cap layer on propagation properties can not be neglected. These effects are characterized for the case of coplanar lines laid on semiconductor substrates. The mathematical development used and the results obtained by a numerical technique are presented.< >