Oxidation of silicon in the afterglow of microwave induced plasmas

• Published in: Applied surface science Vol. 30; no. 1; pp. 40 - 46
• Main Authors: Vinckier, C., Coeckelberghs, P., Stevens, G., De Jaegere, S.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.1987
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(87)90071-7

In this work the influence is described of various experimental parameters on the oxidation process of silicon in the afterglow of microwave induced plasmas in oxygen/argon mixtures. It was found that the oxidation is independent of the flow velocity of the reagents and of the water position in the fast flow reactor. By a chemical titration technique it is shown that oxygen atoms ( 3P) are the major oxidation precursors. They also form the explanation for the observed effect of the plasma composition and the reactor pressure on the silicon oxidation rate. Additionally, chlorine has only a minor effect on the oxidation rate which can be explained on the basis of a kinetic mechanism for the chlorine transformation.