Lattice mismatch and crystal system in epitaxial garnet films

The inclination and spacing of the net planes were separately measured with high accuracy by the X-ray double crystal method for garnet films epitaxially grown on (111) gadolinium gallium garnet substrates. The apparent symmetry of the epitaxial garnet films was shown to the rhombohedral. The differ...

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Bibliographic Details
Published inJournal of crystal growth Vol. 23; no. 4; pp. 253 - 258
Main Authors Isomae, S., Kishino, S., Takahashi, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1974
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Summary:The inclination and spacing of the net planes were separately measured with high accuracy by the X-ray double crystal method for garnet films epitaxially grown on (111) gadolinium gallium garnet substrates. The apparent symmetry of the epitaxial garnet films was shown to the rhombohedral. The difference in lattice spacing between the film and the substrate was maximum in the case of the (111) net plane parallel to the growth surface. These facts are probably due to an elastic deformation induced by the lattice mismatch.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(74)90066-9