Tunable Schottky barrier in InTe/graphene van der Waals heterostructure

The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 3...

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Published inNanotechnology Vol. 31; no. 33; p. 335201
Main Authors Li, Hengheng, Zhou, Zhongpo, Wang, Haiying
Format Journal Article
LanguageEnglish
Published England IOP Publishing 14.08.2020
Subjects
Applied electric field
graphene
InTe
Layer distance
Schottky barrier
vdW heterostructure
Electric field
InTe
Graphene
vdW Heterostructure
Layer distance
Schottky barrier
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Abstract The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than −0.06 V Å−1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å−1 or smaller than −0.13 V Å−1.
AbstractList The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than -0.06 V/Å. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V/Å or smaller than -0.13 V/Å.
The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than −0.06 V Å−1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å−1 or smaller than −0.13 V Å−1.
Author Wang, Haiying
Li, Hengheng
Zhou, Zhongpo
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InTe
Graphene
vdW Heterostructure
Layer distance
Schottky barrier
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Snippet The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles...
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SubjectTerms Applied electric field
graphene
InTe
Layer distance
Schottky barrier
vdW heterostructure
Title Tunable Schottky barrier in InTe/graphene van der Waals heterostructure
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