Tunable Schottky barrier in InTe/graphene van der Waals heterostructure

• Published in: Nanotechnology Vol. 31; no. 33; p. 335201
• Main Authors: Li, Hengheng, Zhou, Zhongpo, Wang, Haiying
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 14.08.2020
• Subjects: Applied electric field; graphene; InTe; Layer distance; Schottky barrier; vdW heterostructure; Electric field; InTe; Graphene; vdW Heterostructure; Layer distance; Schottky barrier
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/ab8e77

The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than −0.06 V Å−1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å−1 or smaller than −0.13 V Å−1.