Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals

• Published in: Japanese Journal of Applied Physics Vol. 9; no. 4; p. 368
• Main Authors: Tamura, Masao, Sugita, Yoshimitsu
• Format: Journal Article
• Language: English
• Published: 01.01.1970

Misfit dislocations generated by the lattice mismatch between the epitaxially grown film and the (111) silicon substrate have been studied mainly through transmission electron microscopy to reveal their distribution, character and interaction. The dislocations were found only in the thin layer of a...