Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals

• Published in: Japanese Journal of Applied Physics Vol. 9; no. 4; p. 368
• Main Authors: Tamura, Masao, Sugita, Yoshimitsu
• Format: Journal Article
• Language: English
• Published: 01.01.1970
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.9.368

Misfit dislocations generated by the lattice mismatch between the epitaxially grown film and the (111) silicon substrate have been studied mainly through transmission electron microscopy to reveal their distribution, character and interaction. The dislocations were found only in the thin layer of a few microns near the interface. Their maximum density was located at depth near the maximum concentration gradient in the boron distribution caused by interdiffusion from the substrate to the film. The dislocations extended from one edge of the crystal to the other in the samples with the film thickness close to the critical value required to generate misfit dislocations. With increasing film thickness they reacted each other to form networks, curved and inclined ones. The structure of dislocation networks resulting from the interaction between intersecting dislocations was examined.