A 155-GHz monolithic low-noise amplifier

This paper presents the design, fabrication, and test results of a three-stage 155-GHz monolithic low-noise amplifier (LNA) fabricated with the 0.1-/spl mu/m pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology. With this amplifier in a test fixture, a small-signal gain of 12 dB was measured at 155...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 46; no. 11; pp. 1660 - 1666
Main Authors Wang, H., Lai, R., Kok, Y.-L., Huang, T.-W., Aust, M.V., Chen, Y.C., Siegel, P.H., Gaier, T., Dengler, R.J., Allen, B.R.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1998
Subjects
Fabrication
Fixtures
Gain measurement
HEMTs
Low-noise amplifiers
Monolithic integrated circuits
Noise figure
Noise measurement
Testing
Waveguide transitions
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Summary:This paper presents the design, fabrication, and test results of a three-stage 155-GHz monolithic low-noise amplifier (LNA) fabricated with the 0.1-/spl mu/m pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology. With this amplifier in a test fixture, a small-signal gain of 12 dB was measured at 155 GHz, and more than 10-dB gain from 151 to 156 GHz. When the amplifier was biased for a low noise figure (NF), an NF of 5.1 dB with an associated gain of 10.1 dB was achieved at 155 GHz. All the results above are referred to the monolithic millimetre-wave integrated circuit (MIMIC) chip with the input and output waveguide-to-microstrip line transition losses corrected.
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content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/22.734551