Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

• Published in: Solid-state electronics Vol. 81; pp. 72 - 77
• Main Authors: Shtepliuk, I., Khranovskyy, V., Lashkarev, G., Khomyak, V., Lazorenko, V., Ievtushenko, A., Syväjärvi, M., Jokubavicius, V., Yakimova, R.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.03.2013; Elsevier
• Subjects: Applied sciences; Compositional fluctuation; Compound structure devices; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Diodes; Electronics; Exact sciences and technology; Heterojunction; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Photoluminescence; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ternary alloy; Ternary alloy; Compositional fluctuation; Photoluminescence; Heterojunction; Rectifier effect; Hole; Voltage current curve; Diode; Doping; Radiative recombination; Carrier to noise ratio; p n junction; Energy barrier; Direct current; p type semiconductor; n type semiconductor; Zinc oxide; Series resistance; Low temperature; Electrical characteristic; II-VI compound; Silicon carbide; Characteristics measurement; Cathodic sputtering; Heterostructures; Charge carrier injection
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2013.01.015

► n-ZnCdO/p-SiC heterostructures exhibit rectification behavior and diode characteristics. ► Acceptor concentration in p-SiC affects the turn-on voltage of heterostructures. ► Cd doping reduces the energy barrier for holes in n-ZnCdO/p-SiC heterostructures. We report the low-temperature (250°C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.