An alternative Mg precursor for p-type doping of OMVPE grown material

A new Mg precursor, bis(methylcyclopentadienyl)magnesium has been studied. This source, used as a liquid, produced hole concentrations of 5×10 19 to 2×10 19 cm ×3 in GaAs. Surface morphologies in this doping range for GaAs layers are excellent. Electrical and optical evaluations indicate low compens...

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Bibliographic Details
Published inJournal of crystal growth Vol. 77; no. 1; pp. 37 - 41
Main Authors Timmons, M.L., Chiang, P.K., Hattangady, S.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.1986
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Summary:A new Mg precursor, bis(methylcyclopentadienyl)magnesium has been studied. This source, used as a liquid, produced hole concentrations of 5×10 19 to 2×10 19 cm ×3 in GaAs. Surface morphologies in this doping range for GaAs layers are excellent. Electrical and optical evaluations indicate low compensation and material comparable to Mg-doped GaAs using other precursors. Some dopant tailing has been observed.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(86)90279-4