Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

A Ge CMOS inverter and a ring oscillator composed of Si-passivated ultrathin-body (UTB, 10 nm) depletion-type poly-Ge p- and n-MISFETs with a single metal gate have been successfully fabricated and demonstrated for the first time. A low Ioff coming from a depletion-type thin channel, a thermally sta...

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Published inApplied physics express Vol. 7; no. 12; pp. 121302 - 121305
Main Authors Kamata, Yoshiki, Koike, Masahiro, Kurosawa, Etsuo, Kurosawa, Masashi, Ota, Hiroyuki, Nakatsuka, Osamu, Zaima, Shigeaki, Tezuka, Tsutomu
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.12.2014
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Summary:A Ge CMOS inverter and a ring oscillator composed of Si-passivated ultrathin-body (UTB, 10 nm) depletion-type poly-Ge p- and n-MISFETs with a single metal gate have been successfully fabricated and demonstrated for the first time. A low Ioff coming from a depletion-type thin channel, a thermally stable gate stack interface against interlayer deposition for interconnection due to Si passivation, and a large Vth difference between p- and n-MISFETs originating from Si passivation enabled poly-Ge CMOS IC operations.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.121302