A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactants

• Published in: Journal of crystal growth Vol. 95; no. 1; pp. 572 - 579
• Main Authors: Yoshikawa, A., Oniyama, H., Yamaga, S., Kasai, H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.1989
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(89)90469-7

ZnS and ZnSe films have been grown by MOMBE using dimethylzinc, H 2S and H 2Se as reactants. The growth mechanism of these films has been studied by investigating the effects of the source-gas cracking on film growth rate. It has been found that the cracking of the source gases drastically affected the growth kinetics and surface morphology of the ZnS and ZnSe films. A speculative model is offered of the reactions among precursors on the substrate surface. A quite smooth and featureless surface can be achieved when both dimethylzinc and chalcogen hydrides are cracked. In contrast, when the source gases are not cracked, premature reaction on the substrate surface takes place, resulting in a rough surface.