Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
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Published in | Japanese Journal of Applied Physics Vol. 17; no. 2; pp. 413 - 422 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.01.1978
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Online Access | Get full text |
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ISSN: | 0021-4922 1347-4065 |
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DOI: | 10.1143/JJAP.17.413 |