RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill

RF characterization of flip-chip interconnects in coplanar waveguide (CPW) circuits with underfill is reported. The scattering-parameters have been measured up to 40 GHz for GaAs CPW through-line chips flip-chip mounted on an alumina substrate with and without an underfill epoxy. A lumped-element mo...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 46; no. 12; pp. 2269 - 2275
Main Authors Zhiping Feng, Wemge Zhang, Bingzhi Su, Gupta, K.C., Lee, Y.C.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1998
Subjects
Assembly
Bonding
Circuit testing
Coplanar waveguides
Fatigue
Frequency measurement
Gallium arsenide
Integrated circuit interconnections
Radio frequency
Semiconductor device measurement
Online AccessGet full text

Cover

More Information
Summary:RF characterization of flip-chip interconnects in coplanar waveguide (CPW) circuits with underfill is reported. The scattering-parameters have been measured up to 40 GHz for GaAs CPW through-line chips flip-chip mounted on an alumina substrate with and without an underfill epoxy. A lumped-element model of flip-chip interconnect has been developed for flip-chip assemblies with and without epoxy. Fatigue life of flip-chip assemblies has been computed for different chip sizes and substrates. The results show feasibility of using underfill encapsulant in microwave/millimeter-wave frequency range.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
ISSN:0018-9480
1557-9670
DOI:10.1109/22.739210